Japanese start-up Power Diamond Systems has advanced its proprietary diamond MOSFET technology and, for the first time in the world for a diamond-based device, achieved a breakdown voltage of 550 V ...

Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.

onsemi’s 1700-V EliteSiC MOSFETs and EliteSiC Schottky diodes provide reliable, efficient operation for energy infrastructure and industrial drive applications. The 1700-V NTH4L028N170M1 MOSFET brings ...

High-voltage power devices and transistors form the backbone of modern energy conversion systems, serving critical roles in renewable energy, automotive powertrains and industrial drives. These ...

A technical paper titled “Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm)” was published by researchers at University of Illinois at Urbana–Champaign.

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...

This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...

Central Semiconductor, manufacturer of discrete semiconductors, recently released the CMXSTB Series surface-mount stabistors packaged in the SOT-26 case. This new series consists of the 1.2-V ...

Mastering board-level insulation principles like clearance, creepage, and dielectric strength is key to preventing arcing and ensuring long-term dependability.